Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility

Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator

Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low temperatures with a maximum value of 16 810 cm 2/V s for 2.05 × 1011 cm – 2 carries at 298 mK. Effective masses obtained from the temperature dependence of Shubnikov–de Haas oscillations have a value of (0.27 ± 0.02) m0 compared to (0.23 ± 0.02) m0 for quantum wells on Si(100) while the cyclotron resonance effective masses obtained at higher magnetic fields without consideration for nonparabolicity effects have values between 0.25 and 0.29 m0. Ratios of the transport and quantum lifetimes, tau/tau q=2.13 ± 0.10, were obtained for the SOI material that are, we believe, the highest reported for any pseudomorphic SiGe modulation doped structure and demonstrates that there is less interface roughness or charge scattering in the SOI material than in metal–oxide–semiconductor field effect transistors or other pseudomorphic SiGe modulation doped quantum wells

Linking in situ Crystallisation and Magma Replenishment via Sill Intrusion in the Rum Western Layered Intrusion, NW Scotland

The construction of layered mafic-ultramafic intrusions has traditionally been attributed to gravity driven accumulation, involving the mechanical settling of crystals onto the magma chamber floor, at the interface between the crystal mush at the base and overlying replenishing magma, such that the layered sequence of cumulates (i.e., the crystal mush) at the floor aggrades upwards. The Rum Western Layered Intrusion (WLI) is a ~250 m sequence of layered peridotite cumulates comprising the structurally lowest portion of the Rum Layered Suite (RLS). As such, it is taken to represent the oldest sequence in the RLS and has been assumed to young upwards. The WLI hosts the largest proportion of harrisite, a cumulate composed of skeletal olivine that formed by in situ crystallisation, in the Rum layered intrusion. Harrisite layers in the WLI ubiquitously exhibit extremely irregular upward-oriented apophyses, up to several metres high and metres across, alongside laterally extensive dome-like structures; features consistent with intrusive, sill-like emplacement of harrisite. The distribution and abundance of harrisite therefore points to chaotic sill-like emplacement of the magmas that produced at least half of the WLI cumulate. This probably occurred various ambient crystal mush temperatures and punctuated intervals during cumulate formation. The harrisite layers are associated with numerous Cr-spinel seams occurring along the tops, bases, and interiors of these layers, suggesting they formed in situ alongside harrisite sills within the crystal mush. Detailed quantitative textural and mineral chemical analysis of Cr-spinel seams support a simple in situ crystallisation process for their formation. It is suggested the Cr-spinel seams form within melt channels that develop along the same hot tears that allowed the harrisite parental melts to enter the crystal mush. The chemistry and texture of Cr-spinel is controlled by the volume of through-flow of melt through the melt channel. Where melt flux through channels was high, sulphide and platinumgroup minerals are more abundant, highlighting the key economic implications of this model for the platinum-group element enrichment of chromitite horizons in layered intrusions. We also highlight the role of infiltration metasomatism at multiple levels of the WLI, where porous percolation of interstitial melt and reactive liquid flow played a key role in cumulate formation, supporting the notion of layered intrusion growth by incremental sill emplacement

Back gating of a two-dimensional hole gas in a SiGe quantum well

A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3

Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.Comment: 4 pages, 3 figure

Scaling and the Metal-Insulator Transition in Si/SiGe Quantum Wells

The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated Si/SiGe/Si quantum well structures has revealed a similar metal- insulator transition as a function of carrier density at zero magnetic field. We also report evidence for a Coulomb gap in the temperature dependence of the resistivity of the dilute 2D hole gas confined in a SiGe quantum well. In addition, the resistivity in the insulating phase scales with a single parameter, and is sample independent. These results are consistent with the occurrence of a metal-insulator transition at zero magnetic field in SiGe square quantum wells driven by strong hole-hole interactions.Comment: 3 pages, 3 figures, LaTe

QUANTITATIVE NON-DESTRUCTIVE NEUTRON ACTIVATION ANALYSIS OF SILVER IN COINS

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/65909/1/j.1475-4754.1967.tb00617.x.pd

Back-reacted saponite in Jurassic mudstones and limestones intruded by a Tertiary sill, Isle of Skye

The Lón Ostatoin stream section, Trotternish Peninsula, Isle of Skye, exposes a sequence of Middle Jurassic mudstones and limestones which have been locally metasomatized by a transgressive sill of Tertiary age. Limestones in the sequence, including some previously reported as bentonite, have been altered to an unusual assemblage of grossular garnet and saponite clay. The mudstones also contain large proportions of saponite together with pyroxene and zeolites. Saponite also occurs within the basalt intrusion. Grossular and pyroxene represent artifacts of relatively high-temperature assemblages that formed during an early phase of alteration. As the intrusion and adjacent altered country rocks cooled, lower-temperature fluids flowed through a late set of contraction (micro)fractures. Back-reacted saponite, analcime and clinoptilolite were formed, possibly as alteration products of the unstable higher-temperature minerals. The lower-temperature mineral assemblage eventually sealed the late fracture system. This paper highlights an important concept for the study of analogue sites used to investigate thermal effects on engineered liners or barrier host rocks for the landfill and radioactive-waste industries. This is that the original thermally altered mineral assemblage may be overprinted by later, lower-temperature back-reactions. A detailed understanding of both processes is necessary in order to construct a sensible model for the thermal and mineralogical evolution of the site

Metal Insulator transition at B=0 in p-SiGe

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure